Invention Application
US20150323471A1 APPARATUS, TECHNIQUES, AND TARGET DESIGNS FOR MEASURING SEMICONDUCTOR PARAMETERS
有权
用于测量半导体参数的设备，技术和目标设计
- Patent Title: APPARATUS, TECHNIQUES, AND TARGET DESIGNS FOR MEASURING SEMICONDUCTOR PARAMETERS
- Patent Title (中): 用于测量半导体参数的设备，技术和目标设计
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Application No.: US14708058Application Date: 2015-05-08
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Publication No.: US20150323471A1Publication Date: 2015-11-12
- Inventor: Noam Sapiens , Andrei V. Shchegrov , Stilian Ivanov Pandev
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Main IPC: G01N21/956
- IPC: G01N21/956 ; G01N21/95 ; G01N21/93 ; G01B11/00
Abstract:
In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
Public/Granted literature
- US09784690B2 Apparatus, techniques, and target designs for measuring semiconductor parameters Public/Granted day:2017-10-10
Information query
