发明申请
US20150325428A1 NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER
审中-公开
氮化物半导体膜，氮化物半导体元件和制造氮化物半导体晶体的方法
- 专利标题： NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER
- 专利标题（中）： 氮化物半导体膜，氮化物半导体元件和制造氮化物半导体晶体的方法
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申请号： US14805141申请日： 2015-07-21
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公开(公告)号： US20150325428A1公开(公告)日： 2015-11-12
- 发明人: Kei KANEKO , Mitsuhiro Kushibe , Hiroshi Katsuno , Shinji Yamada , Jumpei Tajima , Yasuo Ohba
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2013-120863 20130607
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L33/00
摘要：
A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.
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