Invention Application
US20150325638A1 VERTICAL TRENCH MOSFET DEVICE IN INTEGRATED POWER TECHNOLOGIES
审中-公开
集成电力技术中的垂直TRENCH MOSFET器件
- Patent Title: VERTICAL TRENCH MOSFET DEVICE IN INTEGRATED POWER TECHNOLOGIES
- Patent Title (中): 集成电力技术中的垂直TRENCH MOSFET器件
-
Application No.: US14807276Application Date: 2015-07-23
-
Publication No.: US20150325638A1Publication Date: 2015-11-12
- Inventor: Guru MATHUR , Marie DENISON , Sameer PENDHARKAR
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/266 ; H01L29/10 ; H01L29/66 ; H01L21/762

Abstract:
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define at least one vertical drift region bounded on at least two opposite sides by the deep trench structures. The deep trench structures include dielectric liners. The deep trench structures are spaced so as to form RESURF regions for the drift region. Vertical gates are formed in vertically oriented gate trenches in the dielectric liners of the deep trench structures, abutting the vertical drift regions. A body implant mask for implanting dopants for the transistor body is also used as an etch mask for forming the vertically oriented gate trenches in the dielectric liners.
Public/Granted literature
- US09240446B2 Vertical trench MOSFET device in integrated power technologies Public/Granted day:2016-01-19
Information query
IPC分类: