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1.发明申请公开(公告)号：US20150097230A1
公开(公告)日：2015-04-09
申请号：US14044915
申请日：2013-10-03
发明人： Marie DENISON , Sameer PENDHARKAR , Guru MATHUR
CPC分类号： H01L29/7813 , H01L21/225 , H01L21/283 , H01L21/324 , H01L21/823487 , H01L29/063 , H01L29/0696 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/408 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/51 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/66734 , H01L29/7809
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
摘要翻译： 具有垂直漏极延伸MOS晶体管的半导体器件可以通过形成深沟槽结构以形成晶体管的垂直漂移区域而形成，使得每个垂直漂移区域通过深沟槽结构在至少两个相对侧上界定。 深沟槽结构被间隔开以形成漂移区域的RESURF区域。 在垂直漂移区域上的衬底中的沟槽中形成沟槽栅极。 身体区域位于垂直漂移区域上的衬底中。
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公开(公告)号：US20150349092A1
公开(公告)日：2015-12-03
申请号：US14821085
申请日：2015-08-07
发明人： Marie DENISON , Sameer PENDHARKAR , Guru MATHUR
IPC分类号： H01L29/66 , H01L29/10 , H01L29/06 , H01L29/417 , H01L21/324 , H01L21/225 , H01L29/78 , H01L29/08 , H01L21/265
CPC分类号： H01L29/66712 , H01L21/225 , H01L21/26513 , H01L21/324 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66674 , H01L29/66734 , H01L29/7801 , H01L29/7809 , H01L29/7813
摘要： A semiconductor device has a vertical drain extended MOS transistor with deep trench structures to define a vertical drift region and at least one vertical drain contact region, separated from the vertical drift region by at least one instance of the deep trench structures. Dopants are implanted into the vertical drain contact regions and the semiconductor device is annealed so that the implanted dopants diffuse proximate to a bottom of the deep trench structures. The vertical drain contact regions make electrical contact to the proximate vertical drift region at the bottom of the intervening deep trench structure. At least one gate, body region and source region are formed above the drift region at, or proximate to, a top surface of a substrate of the semiconductor device. The deep trench structures are spaced so as to form RESURF regions for the drift region.
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公开(公告)号：US20240304719A1
公开(公告)日：2024-09-12
申请号：US18667032
申请日：2024-05-17
发明人： Marie DENISON , Sameer PENDHARKAR , Guru MATHUR
IPC分类号： H01L29/78 , H01L21/225 , H01L21/283 , H01L21/324 , H01L21/8234 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/40 , H01L29/423 , H01L29/51 , H01L29/66
CPC分类号： H01L29/7813 , H01L21/225 , H01L21/283 , H01L21/324 , H01L21/823487 , H01L29/063 , H01L29/0696 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/408 , H01L29/4236 , H01L29/42376 , H01L29/51 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/66734 , H01L29/7809 , H01L29/42368 , H01L29/4238
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
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公开(公告)号：US20170222040A1
公开(公告)日：2017-08-03
申请号：US15485892
申请日：2017-04-12
发明人： Marie DENISON , Sameer PENDHARKAR , Guru MATHUR
CPC分类号： H01L29/7813 , H01L21/225 , H01L21/283 , H01L21/324 , H01L21/823487 , H01L29/063 , H01L29/0696 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/408 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/51 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/66734 , H01L29/7809
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
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公开(公告)号：US20150214096A1
公开(公告)日：2015-07-30
申请号：US14682823
申请日：2015-04-09
发明人： Binghua HU , Sameer PENDHARKAR , Guru MATHUR , Takehito TAMURA
IPC分类号： H01L21/762 , H01L21/3205 , H01L21/02 , H01L21/265 , H01L21/283
CPC分类号： H01L21/76224 , H01L21/02109 , H01L21/265 , H01L21/283 , H01L21/32055 , H01L21/76232 , H01L29/0619
摘要： The width of a heavily-doped sinker is substantially reduced by forming the heavily-doped sinker to lie in between a number of closely-spaced trench isolation structures, which have been formed in a semiconductor material. During drive-in, the closely-spaced trench isolation structures significantly limit the lateral diffusion.
摘要翻译： 通过形成重掺杂沉降片位于已形成于半导体材料中的多个紧密间隔的沟槽隔离结构之间，大大减小了重掺杂沉降片的宽度。 在进入期间，紧密间隔的沟槽隔离结构显着限制了横向扩散。
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公开(公告)号：US20150097231A1
公开(公告)日：2015-04-09
申请号：US14044926
申请日：2013-10-03
发明人： Guru MATHUR , Marie DENISON , Sameer PENDHARKAR
CPC分类号： H01L29/063 , H01L21/266 , H01L21/76232 , H01L21/823418 , H01L21/823456 , H01L27/088 , H01L29/0653 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/4238 , H01L29/66734 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define at least one vertical drift region bounded on at least two opposite sides by the deep trench structures. The deep trench structures include dielectric liners. The deep trench structures are spaced so as to form RESURF regions for the drift region. Vertical gates are formed in vertically oriented gate trenches in the dielectric liners of the deep trench structures, abutting the vertical drift regions. A body implant mask for implanting dopants for the transistor body is also used as an etch mask for forming the vertically oriented gate trenches in the dielectric liners.
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公开(公告)号：US20200381552A1
公开(公告)日：2020-12-03
申请号：US16995133
申请日：2020-08-17
发明人： Marie DENISON , Sameer PENDHARKAR , Guru MATHUR
IPC分类号： H01L29/78 , H01L29/66 , H01L29/10 , H01L29/08 , H01L21/8234 , H01L29/40 , H01L29/06 , H01L29/423 , H01L21/225 , H01L21/283 , H01L21/324 , H01L29/51
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
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公开(公告)号：US20170125513A1
公开(公告)日：2017-05-04
申请号：US15403403
申请日：2017-01-11
发明人： Marie DENISON , Sameer PENDHARKAR , Guru MATHUR
IPC分类号： H01L29/06 , H01L21/283 , H01L21/324 , H01L21/8234 , H01L29/78 , H01L29/10 , H01L29/40 , H01L29/423 , H01L29/66 , H01L21/225 , H01L29/08
CPC分类号： H01L29/7813 , H01L21/225 , H01L21/283 , H01L21/324 , H01L21/823487 , H01L29/063 , H01L29/0696 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/408 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/51 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/66734 , H01L29/7809
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
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公开(公告)号：US20160071923A1
公开(公告)日：2016-03-10
申请号：US14944450
申请日：2015-11-18
发明人： Marie DENISON , Sameer PENDHARKAR , Guru MATHUR
IPC分类号： H01L29/06 , H01L29/423 , H01L29/10 , H01L21/225 , H01L21/324 , H01L21/283 , H01L29/66 , H01L29/08
CPC分类号： H01L29/7813 , H01L21/225 , H01L21/283 , H01L21/324 , H01L21/823487 , H01L29/063 , H01L29/0696 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/408 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/51 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/66734 , H01L29/7809
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
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10.发明申请公开(公告)号：US20150325638A1
公开(公告)日：2015-11-12
申请号：US14807276
申请日：2015-07-23
发明人： Guru MATHUR , Marie DENISON , Sameer PENDHARKAR
IPC分类号： H01L29/06 , H01L21/266 , H01L29/10 , H01L29/66 , H01L21/762
CPC分类号： H01L29/063 , H01L21/266 , H01L21/76232 , H01L21/823418 , H01L21/823456 , H01L27/088 , H01L29/0653 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/4238 , H01L29/66734 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define at least one vertical drift region bounded on at least two opposite sides by the deep trench structures. The deep trench structures include dielectric liners. The deep trench structures are spaced so as to form RESURF regions for the drift region. Vertical gates are formed in vertically oriented gate trenches in the dielectric liners of the deep trench structures, abutting the vertical drift regions. A body implant mask for implanting dopants for the transistor body is also used as an etch mask for forming the vertically oriented gate trenches in the dielectric liners.
摘要翻译： 具有垂直漏极延伸MOS晶体管的半导体器件可以通过形成深沟槽结构来形成，以限定由深沟槽结构限定在至少两个相对侧上的至少一个垂直漂移区域。 深沟槽结构包括电介质衬垫。 深沟槽结构被间隔开以形成漂移区域的RESURF区域。 垂直栅极形成在深沟槽结构的电介质衬里中的垂直取向的栅极沟槽中，邻接垂直漂移区。 用于注入用于晶体管本体的掺杂剂的物体注入掩模也用作用于在电介质衬垫中形成垂直取向的栅极沟槽的蚀刻掩模。
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