Invention Application
- Patent Title: PIXEL STRUCTURE
- Patent Title (中): 像素结构
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Application No.: US14468353Application Date: 2014-08-26
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Publication No.: US20150340384A1Publication Date: 2015-11-26
- Inventor: Yi-Cheng Lin , Yu-Chi Chen
- Applicant: Au Optronics Corporation
- Priority: TW103117939 20140522
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L33/38

Abstract:
A pixel structure includes a first conductive layer, a semiconductor layer, an insulating layer, a second conductive layer, a passivation layer, and a first electrode layer. The first conductive layer includes a scan line and a bottom electrode. The semiconductor layer includes a first semiconductor pattern having a first source region, a first drain region, and a first channel region. The insulating layer is disposed on the semiconductor layer. The second conductive layer is disposed on the insulating layer and includes a top electrode, a first gate, a first source, a first drain, and a data line connected with the first source. The bottom electrode and the top electrode overlap to form a capacitor. The passivation layer covers the first and second conductive layers and the semiconductor layer. The first electrode layer is disposed on the passivation layer and provides electrical connection to different layers.
Public/Granted literature
- US09214476B1 Pixel structure Public/Granted day:2015-12-15
Information query
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