Invention Application
US20150348773A1 ALUMINUM-NITRIDE BUFFER AND ACTIVE LAYERS BY PHYSICAL VAPOR DEPOSITION
审中-公开
铝 - 氮化物缓冲层和活性层通过物理蒸气沉积
- Patent Title: ALUMINUM-NITRIDE BUFFER AND ACTIVE LAYERS BY PHYSICAL VAPOR DEPOSITION
- Patent Title (中): 铝 - 氮化物缓冲层和活性层通过物理蒸气沉积
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Application No.: US14410790Application Date: 2013-07-01
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Publication No.: US20150348773A1Publication Date: 2015-12-03
- Inventor: Mingwei ZHU , Nag B. PATIBANDLA , Rongjun WANG , Vivek AGRAWAL , Anantha SUBRAMANI , Daniel Lee DIEHL , Xianmin TANG
- Applicant: Applied Materials, Inc.
- International Application: PCT/US2013/048879 WO 20130701
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/322 ; H01J37/34 ; H01L21/3065
Abstract:
Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.
Public/Granted literature
- US10109481B2 Aluminum-nitride buffer and active layers by physical vapor deposition Public/Granted day:2018-10-23
Information query
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