公开(公告)号：US20180261720A1

公开(公告)日：2018-09-13

申请号：US15980583

申请日：2018-05-15

申请人： Applied Materials, Inc.

发明人： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Daniel Lee DIEHL ,  Vivek AGRAWAL ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01J37/34 ,  H01J37/32 ,  H01L31/18

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20150348773A1

公开(公告)日：2015-12-03

申请号：US14410790

申请日：2013-07-01

申请人： Applied Materials, Inc.

发明人： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Vivek AGRAWAL ,  Anantha SUBRAMANI ,  Daniel Lee DIEHL ,  Xianmin TANG

IPC分类号： H01L21/02 ,  H01L21/322 ,  H01J37/34 ,  H01L21/3065

CPC分类号： H01L21/0254 ,  C23C14/0036 ,  C23C14/0641 ,  H01J37/3426 ,  H01J37/3467 ,  H01L21/02458 ,  H01L21/02631 ,  H01L21/3065 ,  H01L21/3228

摘要： Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

摘要翻译： 本文描述的本发明的实施例一般涉及用于形成高质量缓冲层的装置和方法，以及用于形成有用的半导体器件的III-V层，例如功率器件，发光二极管（LED），激光二极管 （LD）或其他有用的装置。 本发明的实施例还可以包括用于形成用于形成有用的半导体器件的高质量缓冲层，III-V族层和电极层的装置和方法。 在一些实施例中，装置和方法包括使用具有一个或多个物理气相沉积（PVD）室的一个或多个簇工具，其适于将具有高结晶取向的高质量氮化铝（AlN）缓冲层沉积在 同时是多个基板的表面。