A semiconductor device that is hardly broken is provided. Alternatively, a semiconductor device having high reliability is provided. The semiconductor device includes a first circuit, a second circuit, a first wiring, a second wiring, and a third wiring. The second circuit has a function of protecting the first circuit. The second circuit includes a first transistor including an oxide semiconductor film. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring has a function of inputting a signal. The second wiring is electrically connected to the first circuit. The second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor. The third wiring is electrically connected to a gate electrode of the first transistor included in the second circuit.