发明申请
- 专利标题: SEMICONDUCTOR DEVICE INCLUDING A STACK HAVING A SIDEWALL WITH RECESSED AND PROTRUDING PORTIONS
- 专利标题(中): 半导体器件,包括具有接收和引导部分的平台的堆叠
-
申请号: US14724952申请日: 2015-05-29
-
公开(公告)号: US20150348983A1公开(公告)日: 2015-12-03
- 发明人: Byoungkeun SON , Yoocheol SHIN , Changhyun LEE , Hyunjung KIM , Chung-II HYUN
- 申请人: Byoungkeun SON , Yoocheol SHIN , Changhyun LEE , Hyunjung KIM , Chung-II HYUN
- 优先权: KR10-2014-0065922 20140530
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L29/423 ; H01L29/788
摘要:
A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.