发明申请
- 专利标题： RELATIVE DOPANT CONCENTRATION LEVELS IN SOLAR CELLS
- 专利标题（中）： 太阳能电池中的相对浓度浓度水平
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申请号： US14292454申请日： 2014-05-30
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公开(公告)号： US20150349180A1公开(公告)日： 2015-12-03
- 发明人: David D. Smith , Staffan Westerberg
- 申请人： David D. Smith , Staffan Westerberg
- 主分类号： H01L31/065
- IPC分类号： H01L31/065 ; H01L31/0288 ; H01L31/18 ; H01L31/0368
摘要：
A solar cell may include a substrate having a front side facing the sun to receive solar radiation during normal operation and a backside opposite the front side. The solar cell may further include a polysilicon layer formed over the backside of the substrate. A P-type diffusion region and an N-type diffusion region may be formed in the polysilicon layer to provide a butting PN junction. The P-type diffusion region may have a first dopant concentration level and the N-type diffusion region may have a second dopant concentration level such that the first dopant concentration level is less than the second dopant concentration level.
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