发明申请
US20150355095A1 METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR QUALITY CONTROL OF OXIDE SEMICONDUCTOR THIN FILM
有权
用于评价氧化物半导体薄膜的方法，以及氧化物半导体薄膜的质量控制方法
- 专利标题： METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR QUALITY CONTROL OF OXIDE SEMICONDUCTOR THIN FILM
- 专利标题（中）： 用于评价氧化物半导体薄膜的方法，以及氧化物半导体薄膜的质量控制方法
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申请号： US14760023申请日： 2013-09-04
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公开(公告)号： US20150355095A1公开(公告)日： 2015-12-10
- 发明人: Kazushi HAYASHI , Toshihiro KUGIMIYA , Tomoya KISHI , Aya MIKI
- 申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
- 优先权： JP2013-004708 20130115; JP2013-055795 20130318
- 国际申请： PCT/JP2013/073848 WO 20130904
- 主分类号： G01N21/64
- IPC分类号： G01N21/64 ; H01L29/24 ; H01L21/66
摘要：
This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.
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