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公开(公告)号：US20170170029A1
公开(公告)日：2017-06-15
申请号：US15327296
申请日：2015-08-06
IPC分类号： H01L21/467 , C23C14/34 , H01L29/04 , C23C14/18 , H01L21/02 , H01L29/786 , C23C14/08 , C23C14/35
摘要： This thin film transistor has a gate electrode, a gate insulating film, an oxide semiconductor thin film, an etch stop layer for protecting the oxide semiconductor thin film, a source and drain electrodes, and a passivation film in this order on a substrate. The oxide semiconductor thin film is formed of an oxide configured from In, Ga and Sn as metal elements, and O, and has an amorphous structure, and the etch stop layer and/or the passivation film includes SiNx. The thin film transistor has an extremely high mobility of approximately 40 cm2/Vs or more.
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公开(公告)号：US20170184660A1
公开(公告)日：2017-06-29
申请号：US15316801
申请日：2015-06-22
发明人： Kazushi HAYASHI , Aya MIKI , Nobuyuki KAWAKAMI
IPC分类号： G01R31/265 , H01L21/28 , G01R1/06 , G01R31/27 , H01L29/786 , G01R31/26
CPC分类号： G01R31/2656 , G01R1/06 , G01R31/2623 , G01R31/27 , H01L21/28 , H01L22/12 , H01L22/14 , H01L27/32 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78693
摘要： Provided is a method for simply evaluating defects caused in interface states in oxide semiconductor thin films and protective films in TFTs having protective films formed on the surface of oxide semiconductor thin films without actually measuring the characteristics of the same.This evaluation method evaluates defects caused in the interface states by measuring electron states in the oxide semiconductor thin film by a contact method or noncontact method. The defects caused in the interface states are any of the following (1)-(3). (1) Threshold value voltage (Vth,) when a positive bias is applied to the thin-film transistor (2) Difference in threshold value voltage (ΔVth) before and after applying the positive bias to the thin-film transistor (3) Threshold value during the first measurement when a plurality of measurements is made of the threshold value voltage when a positive bias is applied to the thin-film transistor.
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公开(公告)号：US20160099357A2
公开(公告)日：2016-04-07
申请号：US14721779
申请日：2015-05-26
发明人： Hiroshi GOTO , Aya MIKI , Tomoya KISHI , Kenta HIROSE , Shinya MORITA , Toshihiro KUGIMIYA
IPC分类号： H01L29/786 , H01L29/24 , H01L27/12
CPC分类号： H01L29/78693 , C23C14/08 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/24 , H01L29/78606 , H01L29/78696
摘要： Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.
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4.发明申请OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR 审中-公开薄膜晶体管半导体层氧化物，具有氧化硅的薄膜晶体管的半导体层和薄膜晶体管公开(公告)号：US20170053800A1
公开(公告)日：2017-02-23
申请号：US15290715
申请日：2016-10-11
发明人： Hiroaki TAO , Aya MIKI , Shinya MORITA , Satoshi YASUNO , Toshihiro KUGIMIYA , Jae Woo PARK , Je Hun LEE , Byung Du AHN , Gun Hee KIM
IPC分类号： H01L21/02 , H01L21/477
CPC分类号： H01L21/02554 , G02F1/1368 , H01L21/02565 , H01L21/02587 , H01L21/02631 , H01L21/477 , H01L29/12 , H01L29/66969 , H01L29/7869
摘要： The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
摘要翻译： 用于薄膜晶体管的本发明的氧化物是含有In，Zn和Sn的In-Zn-Sn系氧化物，其中，当In-Zn-Sn系中含有的金属元素的含量（原子％ 当[In] /（[In] + [Sn]）[Zn]，[In] + [Sn]表示[Zn]，[Sn]和[In]时，In-Zn-Sn系氧化物满足下述（2） ]）≤0.5; 当[In] /（[In] + [Sn]）> 0.5时，或以下表达式（1），（3）和（4）。 [In] /（[In] + [Zn] + [Sn]）≤0.3 - - - （1），[In] /（[In] + [Zn] + [Sn]）≤1.4×{[Zn] /([Zn]+[Sn])}-0.5 - - - （2），[Zn] /（[In] + [Zn] + [Sn]）≤0.83 - - - （3）和0.1≤[ In] /（[In] + [Zn] + [Sn]） - - - （4）。 根据本发明，可以获得用于薄膜晶体管的氧化物薄膜，其提供具有优异的开关特性的TFT，并且在溅射中具有高溅射速率并且在湿蚀刻中具有适当控制的蚀刻速率。
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5.发明申请METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN ABOVE EVALUATION METHOD 有权用于评价氧化物半导体薄膜的方法，用于管理氧化物半导体薄膜质量的方法，以及在上述评估方法中使用的评估单元和评估装置公开(公告)号：US20160282284A1
公开(公告)日：2016-09-29
申请号：US15031990
申请日：2014-12-01
CPC分类号： G01N22/00 , G01N21/63 , G01N21/8422 , G01N27/04 , H01L22/12 , H01L22/14 , H01L29/7869
摘要： The present invention provides a method for accurately and easily measuring/evaluating/predicting/estimating the electrical resistance of an oxide semiconductor thin film, and a method for managing the film quality. The method for evaluating an oxide semiconductor thin film includes: a first step for irradiating, with excitation light and microwave, a sample on which an oxide semiconductor thin film is formed, measuring the maximum value of the reflected microwave by the thin film which changes due to the excitation light irradiation, then stopping the excitation light irradiation and measuring the change in reflectivity of the microwave from the thin film after the excitation light irradiation has been stopped; and a second step for calculating a parameter corresponding to the slow decay observed after the excitation light irradiation has been stopped from the change in the reflectivity and evaluating the electrical resistivity of the oxide semiconductor thin film.
摘要翻译： 本发明提供了一种准确且容易地测量/评估/预测/估计氧化物半导体薄膜的电阻的方法，以及用于管理薄膜质量的方法。 用于评估氧化物半导体薄膜的方法包括：用激发光和微波照射形成有氧化物半导体薄膜的样品的第一步骤，通过由薄膜变化的薄膜测量反射微波的最大值 激发光照射，然后停止激发光照射，并且在激发光照射停止之后测量来自薄膜的微波反射率的变化; 以及第二步骤，用于计算与激发光照射之后观察到的慢衰减的参数相对应的反射率的变化，并评估氧化物半导体薄膜的电阻率。
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6.发明申请METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR QUALITY CONTROL OF OXIDE SEMICONDUCTOR THIN FILM 有权用于评价氧化物半导体薄膜的方法，以及氧化物半导体薄膜的质量控制方法公开(公告)号：US20150355095A1
公开(公告)日：2015-12-10
申请号：US14760023
申请日：2013-09-04
发明人： Kazushi HAYASHI , Toshihiro KUGIMIYA , Tomoya KISHI , Aya MIKI
CPC分类号： G01N21/6489 , H01L22/12 , H01L29/24 , H01L29/66969 , H01L29/78693
摘要： This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.
摘要翻译： 该氧化物半导体薄膜的评价方法包括以下方式评价氧化物半导体薄膜的应力稳定性：基于在使氧化物半导体薄膜的样品照射电子束或激发光时激发的发光的发光强度 形成了。 基于在从氧化物半导体薄膜激发的发光光的1.6-1.9eV的范围内观察到的发光强度（L1）来评价氧化物半导体薄膜的应力稳定性。
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