Invention Application
- Patent Title: DRAM with SDRAM Interface, and Hybrid Flash Memory Module
- Patent Title (中): 具有SDRAM接口的DRAM和混合闪存模块
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Application No.: US14763019Application Date: 2013-03-27
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Publication No.: US20150355846A1Publication Date: 2015-12-10
- Inventor: Yutaka UEMATSU , Satoshi MURAOKA , Hideki OSAKA , Masabumi SHIBATA , Yuusuke FUKUMURA , Satoru WATANABE , Hiroshi KAKITA , Akio IDEI , Hitoshi UENO , Takayuki ONO , Takashi MIYAGAWA , Michinori NAITO , Taishi SUMIKURA , Yuichi FUKUDA
- Applicant: HITACHI, LTD.
- International Application: PCT/JP2013/059155 WO 20130327
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
When DRAMs that are high-speed memories and flash memories that are lower in speed but can be larger in capacity than the DRAM are to be mounted on a DIMM, what matters in maximizing CPU memory bus throughput is the arrangement of the mounted components. The present disclosure provides a memory module (DIMM) that includes memory controllers arranged on the module surface closer to a socket terminal and DRAMs serving as high-speed memories arranged on the back surface. Nonvolatile memories as large-capacity memories are arranged on the side farther from the socket terminal.
Public/Granted literature
- US09569144B2 DRAM with SDRAM interface, and hybrid flash memory module Public/Granted day:2017-02-14
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