Invention Application
US20150355963A1 MRAM SMART BIT WRITE ALGORITHM WITH ERROR CORRECTION PARITY BITS
有权
具有错误校正奇偶校验位的MRAM SMART BIT写入算法
- Patent Title: MRAM SMART BIT WRITE ALGORITHM WITH ERROR CORRECTION PARITY BITS
- Patent Title (中): 具有错误校正奇偶校验位的MRAM SMART BIT写入算法
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Application No.: US14827591Application Date: 2015-08-17
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Publication No.: US20150355963A1Publication Date: 2015-12-10
- Inventor: Yue-Der Chih , Hung-Chang Yu , Kai-Chun Lin , Chin-Yi Huang , Laun C. Tran
- Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
- Main IPC: G06F11/10
- IPC: G06F11/10 ; H03M13/00 ; H03M13/11

Abstract:
Some embodiments relate to a system that includes write circuitry, read circuitry, and comparison circuitry. The write circuitry is configured to attempt to write an expected multi-bit word to a memory location in a memory device. The read circuitry is configured to read an actual multi-bit word from the memory location. The comparison circuitry is configured to compare the actual multi-bit word read from the memory location with the expected multi-bit word which was previously written to the memory location to distinguish between a number of erroneous bits in the actual multi-bit word and a number of correct bits in the actual multi-bit word. The write circuitry is further configured to re-write the number of erroneous bits to the memory location without attempting to re-write the number of correct bits to the memory location.
Public/Granted literature
- US09747159B2 MRAM smart bit write algorithm with error correction parity bits Public/Granted day:2017-08-29
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