Invention Application
US20150357441A1 METHOD FOR MAKING A SEMICONDUCTOR DEVICE WHILE AVOIDING NODULES ON A GATE
有权
用于制造在门上避开喷嘴的半导体器件的方法
- Patent Title: METHOD FOR MAKING A SEMICONDUCTOR DEVICE WHILE AVOIDING NODULES ON A GATE
- Patent Title (中): 用于制造在门上避开喷嘴的半导体器件的方法
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Application No.: US14300506Application Date: 2014-06-10
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Publication No.: US20150357441A1Publication Date: 2015-12-10
- Inventor: Qing Liu , Ruilong Xie , Xiuyu Cai , Kejia Wang , Chun-Chen Yeh
- Applicant: STMICROELECTRONICS, INC. , GLOBALFOUNDRIES Inc. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78
Abstract:
A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate, and a gate overlying the semiconductor fins. The gate has a tapered outer surface. A first pair of sidewall spacers is formed adjacent the gate an exposed tapered outer surface is also defined. Portions of the gate are removed at the exposed tapered outer surface to define a recess. A second pair of sidewall spacers is formed covering the first pair of sidewall spacers and the recess. Source/drain regions are formed on the semiconductor fins.
Public/Granted literature
- US09318579B2 Method for making a semiconductor device while avoiding nodules on a gate Public/Granted day:2016-04-19
Information query
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