发明申请
US20150360939A1 METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL
有权
使用外加材料增加MEMS外壳压力的方法
- 专利标题: METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL
- 专利标题(中): 使用外加材料增加MEMS外壳压力的方法
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申请号: US14832786申请日: 2015-08-21
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公开(公告)号: US20150360939A1公开(公告)日: 2015-12-17
- 发明人: Cerina Zhang , Martin Lim , Jongwoo Shin , Joseph Seeger
- 申请人: InvenSense, Inc.
- 主分类号: B81C1/00
- IPC分类号: B81C1/00
摘要:
Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.