Invention Application
US20150364209A1 METHOD FOR CONTROLLING THE BREAKDOWN OF AN ANTIFUSE MEMORY CELL
审中-公开
用于控制抗细胞记忆细胞突变的方法
- Patent Title: METHOD FOR CONTROLLING THE BREAKDOWN OF AN ANTIFUSE MEMORY CELL
- Patent Title (中): 用于控制抗细胞记忆细胞突变的方法
-
Application No.: US14832802Application Date: 2015-08-21
-
Publication No.: US20150364209A1Publication Date: 2015-12-17
- Inventor: Philippe Candelier , Joel Damiens , Elise Le Roux
- Applicant: STMicroelectronics SA
- Priority: FR1254049 20120503
- Main IPC: G11C17/16
- IPC: G11C17/16 ; H01L27/112 ; G11C17/18
Abstract:
A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.
Public/Granted literature
- US09564242B2 Method for controlling the breakdown of an antifuse memory cell Public/Granted day:2017-02-07
Information query
