公开(公告)号：US09564242B2

公开(公告)日：2017-02-07

申请号：US14832802

申请日：2015-08-21

Applicant: STMicroelectronics SA

Inventor： Philippe Candelier ,  Joel Damiens ,  Elise Le Roux

IPC: G11C17/16 ,  G11C17/18 ,  H01L27/12 ,  H01L27/112 ,  H01L27/10

CPC classification number: G11C17/165 ,  G11C17/18 ,  H01L27/101 ,  H01L27/11206

Abstract: A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

Abstract translation: 一种用于控制形成在半导体衬底上的反熔层存储单元击穿的方法，包括以下步骤：施加编程电压; 检测故障时间; 并且在故障时间之后的故障时间之后中断施加编程电压。

公开(公告)号：US20150364209A1

公开(公告)日：2015-12-17

申请号：US14832802

申请日：2015-08-21

Applicant: STMicroelectronics SA

Inventor： Philippe Candelier ,  Joel Damiens ,  Elise Le Roux

IPC: G11C17/16 ,  H01L27/112 ,  G11C17/18

CPC classification number: G11C17/165 ,  G11C17/18 ,  H01L27/101 ,  H01L27/11206

Abstract: A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

Abstract translation: 一种用于控制形成在半导体衬底上的反熔层存储单元击穿的方法，包括以下步骤：施加编程电压; 检测故障时间; 并且在故障时间之后的故障时间之后中断施加编程电压。

公开(公告)号：US20150085560A1

公开(公告)日：2015-03-26

申请号：US14494383

申请日：2014-09-23

Applicant: STMicroelectronics SA

Inventor： Philippe Candelier ,  Thérèse Andrée Diokh ,  Joel Damiens ,  Elise Le Roux

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C13/0033 ,  G11C13/004 ,  G11C14/009 ,  G11C2013/0071 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/79

Abstract: A method of controlling an array of ReRAM cells including programmable-resistance storage elements, including: during a standby period, applying a non-zero standby voltage between electrodes of the storage elements of each cell of the array.

Abstract translation: 一种控制包括可编程电阻存储元件的ReRAM单元阵列的方法，包括：在待机期间，在阵列的每个单元的存储元件的电极之间施加非零备用电压。