Invention Application
US20150364332A1 INORGANIC FILM-FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES, AND PATTERN-FORMING METHOD
审中-公开
用于多层耐蚀工艺的无机成膜组合物和图案形成方法
- Patent Title: INORGANIC FILM-FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES, AND PATTERN-FORMING METHOD
- Patent Title (中): 用于多层耐蚀工艺的无机成膜组合物和图案形成方法
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Application No.: US14833718Application Date: 2015-08-24
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Publication No.: US20150364332A1Publication Date: 2015-12-17
- Inventor: Hisashi Nakagawa , Tatsuya Sakai , Shunsuke Kurita , Satoshi Dei , Kazunori Takanashi , Yoshio Takimoto , Masayuki Motonari
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2013-063096 20130325
- Main IPC: H01L21/308
- IPC: H01L21/308 ; C07F7/28 ; C07F9/00 ; G03F7/11 ; C07F5/06 ; G03F7/20 ; G03F7/32 ; C07F5/00 ; C07F11/00
Abstract:
An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n (1)
Public/Granted literature
- US10090163B2 Inorganic film-forming composition for multilayer resist processes, and pattern-forming method Public/Granted day:2018-10-02
Information query
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