公开(公告)号：US20150364332A1

公开(公告)日：2015-12-17

申请号：US14833718

申请日：2015-08-24

Applicant: JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Tatsuya Sakai ,  Shunsuke Kurita ,  Satoshi Dei ,  Kazunori Takanashi ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/308 ,  C07F7/28 ,  C07F9/00 ,  G03F7/11 ,  C07F5/06 ,  G03F7/20 ,  G03F7/32 ,  C07F5/00 ,  C07F11/00

CPC classification number: H01L21/3081 ,  C07F5/00 ,  C07F5/003 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/36 ,  H01L21/0332

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

Abstract translation: 一种用于多层抗蚀剂工艺的无机成膜组合物，其包括：金属原子; 至少一个桥连配体; 和除了至少一个桥连配体之外并且衍生自羟基酸酯，二 - 二酮，β-酮酯，二羧酸酯或其组合的配体。 至少一个桥连配体包括衍生自由式（1）表示的化合物的第一桥连配体。 相对于总共的桥连配体，第一桥连配体的量不小于50mol％。 在式（1）中，R 1表示具有n价的有机基团。 X表示-OH，-COOH，-NCO或-NHRa，其中Ra表示氢原子或一价有机基团。 n为2〜4的整数。R1（X）n（1）

公开(公告)号：US09182671B2

公开(公告)日：2015-11-10

申请号：US13630340

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Shinya Nakafuji ,  Satoru Murakami ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/302 ,  C08F10/00 ,  G03F7/095 ,  G03F7/038 ,  C08G61/02 ,  H01L21/027

CPC classification number: G03F7/095 ,  C08G61/02 ,  C08G2261/3422 ,  G03F7/0384 ,  H01L21/0271

Abstract: A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract translation: 形成图案的方法包括使用第一组合物形成抗蚀剂下层膜，在基片上提供抗蚀剂下层膜。 第一组合物包括具有由下式（1）表示的结构单元的聚合物。 在式（1）中，Ar 1和Ar 2各自独立地表示由下式（2）表示的二价基团。 使用抗蚀剂组合物在抗蚀剂下层膜上设置抗蚀剂涂膜。 使用抗蚀剂涂膜形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模，依次干蚀刻抗蚀剂下层膜和基板，在基板上形成预定图案。

公开(公告)号：US20140011360A1

公开(公告)日：2014-01-09

申请号：US14027500

申请日：2013-09-16

Applicant: JSR CORPORATION

Inventor： Yuuji NAMIE ,  Tomohisa Konno ,  Masayuki Motonari ,  Hirotaka Shida ,  Akihiro Takemura

IPC: H01L21/306 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

Abstract translation: 本发明的化学机械研磨用水系分散体包含（A）重均分子量为500,000〜2000000的第一水溶性聚合物，其分子中含有杂环，（B）第二水溶性聚合物或其盐 重均分子量为1000〜10000，包括选自羧基和磺酸基的一个基团，（C）氧化剂和（D）磨粒，pH为7〜12。

公开(公告)号：US10090163B2

公开(公告)日：2018-10-02

申请号：US14833718

申请日：2015-08-24

Applicant: JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Tatsuya Sakai ,  Shunsuke Kurita ,  Satoshi Dei ,  Kazunori Takanashi ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/308 ,  H01L21/033 ,  G03F7/11 ,  G03F7/09 ,  G03F7/36 ,  G03F7/32 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  C07F13/00 ,  C07F11/00 ,  C07F9/00 ,  C07F7/28 ,  C07F5/06 ,  C07F5/00

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

公开(公告)号：US09268229B2

公开(公告)日：2016-02-23

申请号：US13853131

申请日：2013-03-29

Applicant: JSR CORPORATION

Inventor： Hiromitsu Tanaka ,  Junya Suzuki ,  Masayuki Motonari ,  Tooru Kimura

IPC: G03F7/09 ,  G03F7/004 ,  G03F7/075 ,  H01L21/312

CPC classification number: G03F7/094 ,  G03F7/004 ,  G03F7/075 ,  G03F7/0752

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R3s are identical or different.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和溶剂组合物。 溶剂组合物包括含有由下式（1）表示的化合物或碳酸酯化合物的标准沸点不低于150.0℃的有机溶剂.R 1和R 2各自独立地表示氢原子，烷基 具有1至4个碳原子的基团或具有1至4个碳原子的酰基。 R3表示氢原子或甲基。 n为1〜4的整数。在n为2以上的情况下，多个R3相同或不同。

公开(公告)号：US09091922B2

公开(公告)日：2015-07-28

申请号：US13714406

申请日：2012-12-14

Applicant: JSR CORPORATION

Inventor： Shin-ya Nakafuji ,  Satoru Murakami ,  Kazuhiko Koumura ,  Yuushi Matsumura ,  Masayuki Motonari ,  Katsuhisa Mizoguchi

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/091 ,  H01L21/0276

Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

Abstract translation: 用于形成抗蚀剂下层膜的树脂组合物包括具有芳环的树脂和具有由下式（i）表示的部分结构的交联剂。 X表示氧原子，硫原子，* -COO-或-NRA-。 R1表示氢原子或C1-30一价烃基。 R2表示羟基，磺胺基，氰基，硝基，C1-30一价烃基，C1-30一价羟基烃基或C1-30一价硫代烃基。 p为1〜3的整数。

公开(公告)号：US08927201B2

公开(公告)日：2015-01-06

申请号：US14038861

申请日：2013-09-27

Applicant: JSR Corporation

Inventor： Kazunori Takanashi ,  Yoshio Takimoto ,  Takashi Mori ,  Kazuo Nakahara ,  Masayuki Motonari

IPC: G03F7/26 ,  G03F7/11

CPC classification number: G03F7/11 ,  G03F7/0002 ,  G03F7/094 ,  G03F7/26

Abstract: A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

Abstract translation: 多层抗蚀剂工艺图案形成方法包括在衬底上提供无机膜。 在无机膜上设置保护膜。 在保护膜上设置抗蚀剂图案。 通过利用抗蚀剂图案作为掩模的蚀刻在衬底上提供图案。 多层抗蚀剂工艺无机成膜组合物包括化合物，有机溶剂和交联促进剂。 该化合物包括包含可水解基团的金属化合物，包含可水解基团的金属化合物的水解产物，包含可水解基团的金属化合物的水解缩合产物或其组合。 该化合物包括属于元素周期表第6族，第12族或第13族的至少一种金属元素。