Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US14834736Application Date: 2015-08-25
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Publication No.: US20150364502A1Publication Date: 2015-12-17
- Inventor: Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA , Masashi TSUBUKU
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2009-185317 20090807; JP2009-206489 20090907
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786

Abstract:
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
Public/Granted literature
- US09583509B2 Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more Public/Granted day:2017-02-28
Information query
IPC分类: