Invention Application
US20150364595A1 REPLACEMENT GATE STRUCTURE ON FINFET DEVICES WITH REDUCED SIZE FIN IN THE CHANNEL REGION
有权
在通道区域中具有减小尺寸FIN的FINFET器件的更换栅结构
- Patent Title: REPLACEMENT GATE STRUCTURE ON FINFET DEVICES WITH REDUCED SIZE FIN IN THE CHANNEL REGION
- Patent Title (中): 在通道区域中具有减小尺寸FIN的FINFET器件的更换栅结构
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Application No.: US14731876Application Date: 2015-06-05
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Publication No.: US20150364595A1Publication Date: 2015-12-17
- Inventor: Bingwu Liu , Hui Zang
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
One illustrative method disclosed herein includes, among other things, forming a fin protection layer around a fin, forming a sacrificial gate electrode above a section of the fin protection layer, forming at least one sidewall spacer adjacent the sacrificial gate electrode, removing the sacrificial gate electrode to define a gate cavity that exposes a portion of the fin protection layer, oxidizing at least the exposed portion of the fin protection layer to thereby form an oxidized portion of the fin protection layer, and removing the oxidized portion of the fin protection layer so as to thereby expose a surface of the fin within the gate cavity.
Public/Granted literature
- US09331202B2 Replacement gate structure on FinFET devices with reduced size fin in the channel region Public/Granted day:2016-05-03
Information query
IPC分类:
