SEMICONDUCTOR DEVICE

Invention Application

US20150364606A1 SEMICONDUCTOR DEVICE 审中-公开

Title translation: 半导体器件

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Patent Title: SEMICONDUCTOR DEVICE
Patent Title (中): 半导体器件
Application No.: US14828669

Application Date: 2015-08-18
Publication No.: US20150364606A1

Publication Date: 2015-12-17
Inventor: Shunpei YAMAZAKI , Jun KOYAMA , Kiyoshi KATO
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Priority: JP2009-264623 20091120
Main IPC: H01L29/786
IPC: H01L29/786 ; H01L29/24 ; H01L27/12 ; H01L23/528 ; H01L29/78

Abstract:

An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.

Abstract(Chinese):

本发明的目的是提供一种半导体器件，其组合晶体管，其集成在其沟道形成区域中包括氧化物半导体的相同衬底晶体管和在其沟道形成区域中包括非氧化物半导体的晶体管。本发明的应用是实现基本上不需要特定擦除操作的非易失性半导体存储器，并且不会因重复的写入操作而遭受损坏。此外，半导体器件很适合于存储多值数据。在说明书中详细说明制造方法，应用电路和驱动/读取方法。

Public/Granted literature

US09705005B2 Semiconductor device Public/Granted day:2017-07-11

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管