Invention Application
- Patent Title: METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT
- Patent Title (中): 制造发光元件的方法
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Application No.: US14737355Application Date: 2015-06-11
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Publication No.: US20150364643A1Publication Date: 2015-12-17
- Inventor: Hidetsugu SUMITOMO , Hisashi KASAI
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Priority: JP2014-122211 20140613; JP2015-044181 20150306
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/46 ; H01L33/36

Abstract:
A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least the location to which the separation groove extends.
Public/Granted literature
- US09343617B2 Method of manufacturing light emitting element Public/Granted day:2016-05-17
Information query
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