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1.发明申请公开(公告)号：US20160284940A1
公开(公告)日：2016-09-29
申请号：US15173013
申请日：2016-06-03
Applicant: NICHIA CORPORATION
Inventor： Hirofumi KAWAGUCHI , Akinori YONEDA , Hisashi KASAI , Kazuki KASHIMOTO , Masafumi ITASAKA
CPC classification number: H01L33/405 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/42 , H01L2933/0016
Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.
Abstract translation: 一种半导体发光元件，具有：半导体层叠体; 包含设置在p型半导体层的上表面上的Ag的全表面电极; 覆盖全表面电极的表面的覆盖电极设置成在全表面电极的外边缘处与p型半导体层的上表面接触，并由Al基金属材料制成; p侧电极，设置在所述盖电极的表面的一部分上; 覆盖所述覆盖电极的其他表面并且包含形成所述覆盖电极的金属材料的氧化物的金属氧化物膜; 并且提供由氧化物制成并覆盖金属氧化物膜的表面的绝缘膜。
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公开(公告)号：US20160149085A1
公开(公告)日：2016-05-26
申请号：US14947716
申请日：2015-11-20
Applicant: Nichia Corporation
Inventor： Kazuki KASHIMOTO , Masafumi ITASAKA , Hisashi KASAI , Naoki AZUMA
CPC classification number: H01L33/385 , H01L33/08 , H01L33/382 , H01L2933/0016
Abstract: A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.
Abstract translation: 半导体发光元件的制造方法包括在基板上形成半导体层叠体，所述半导体层叠体包含第一半导体层和第二半导体层， 去除所述半导体堆叠层体的一部分并暴露所述第一半导体层，使得所述第二半导体层包括在平面方向上延伸的延伸部分; 形成电连接所述第一半导体层和所述第二半导体层的延伸部分的导体层; 形成与第一半导体层电连接的第一电极和与第二半导体层电连接的第二电极; 形成覆盖所述第一电极和所述第二电极的至少一部分的至少一部分的保护膜; 并且在形成保护膜之后，去除延伸部分的暴露部分的一部分。
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公开(公告)号：US20240105594A1
公开(公告)日：2024-03-28
申请号：US18476152
申请日：2023-09-27
Applicant: NICHIA CORPORATION
Inventor： Hisashi KASAI
IPC: H01L23/525 , H01L23/532 , H01L23/62
CPC classification number: H01L23/5254 , H01L23/5329 , H01L23/62
Abstract: An anti-fuse element includes a first electrode, an insulating layer disposed on the first electrode, and a second electrode disposed on the insulating layer. The insulating layer includes a first region and a second region, with a thickness of the first region being smaller than a thickness of the second region. An outer edge of the second electrode is located inward of an outer edge of the insulating layer in a top view.
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公开(公告)号：US20180102460A1
公开(公告)日：2018-04-12
申请号：US15840669
申请日：2017-12-13
Applicant: NICHIA CORPORATION
Inventor： Hirofumi KAWAGUCHI , Akinori YONEDA , Hisashi KASAI , Kazuki KASHIMOTO , Masafumi ITASAKA
CPC classification number: H01L33/405 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/42 , H01L2933/0016
Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.
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Patent Agency Ranking
公开(公告)号：US20150311410A1
公开(公告)日：2015-10-29
申请号：US14745120
申请日：2015-06-19
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Akiyoshi KINOUCHI , Hisashi KASAI , Yoshiyuki AIHARA , Hirokazu SASA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
Abstract translation: 发光器件包括具有p型半导体层和n型半导体层的半导体芯片，该半导体芯片适于在p型半导体层和n型半导体层之间发光; p侧焊盘电极，设置在所述半导体芯片的上表面侧并且位于所述p型半导体层上方; 设置在所述半导体芯片的上表面侧并且位于所述n型半导体层上的n侧焊盘电极; 设置成覆盖半导体芯片的上表面的树脂层; p侧连接电极和n侧连接电极，设置在树脂层的外表面并位于半导体芯片的上表面侧; 以及设置在树脂中的金属线。 金属线适于连接p侧焊盘电极和p侧连接电极之间以及n侧焊盘电极和n侧连接电极之中的至少一个。
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公开(公告)号：US20160365498A1
公开(公告)日：2016-12-15
申请号：US15247188
申请日：2016-08-25
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Akiyoshi KINOUCHI , Hisashi KASAI , Yoshiyuki AIHARA , Hirokazu SASA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
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公开(公告)号：US20150364643A1
公开(公告)日：2015-12-17
申请号：US14737355
申请日：2015-06-11
Applicant: NICHIA CORPORATION
Inventor： Hidetsugu SUMITOMO , Hisashi KASAI
CPC classification number: H01L33/0079 , H01L33/0075 , H01L33/20 , H01L33/36 , H01L33/46 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033
Abstract: A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least the location to which the separation groove extends.
Abstract translation: 制造发光元件的方法包括提供包括生长衬底和形成在生长衬底上的半导体结构的晶片，晶片的下侧是生长衬底侧，并且晶片的上侧是半导体结构侧 作为上侧; 在所述晶片的上侧形成分离槽，以将所述半导体结构的部分划分，所述分离槽在深度方向上延伸到所述晶片中的位置; 在半导体结构的每个分界部分的上侧上形成p电极和n电极; 通过使用原子层沉积方法在晶片的上侧形成包括限定分离槽的部分的电介质多层膜; 以及通过从所述晶片的下侧去除所述晶片的一部分至少所述分离槽延伸的位置将所述晶片分离成多个发光元件。
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公开(公告)号：US20150349207A1
公开(公告)日：2015-12-03
申请号：US14723463
申请日：2015-05-28
Applicant: NICHIA CORPORATION
Inventor： Takayuki SOGO , Takanobu SOGAI , Hisashi KASAI
CPC classification number: H01L33/382 , H01L33/0079 , H01L33/0095 , H01L33/385 , H01L33/52 , H01L33/54 , H01L33/62 , H01L2933/0016 , H01L2933/005 , H01L2933/0066
Abstract: A light-emitting device includes a semiconductor light-emitting element, a first resin layer, a first metallic layer, a second resin layer, and a second metallic layer. The semiconductor light-emitting element includes a semiconductor stacked body and an electrode provided on one side of the semiconductor stacked body. The second resin layer is provided on the first resin layer and has a lower surface in contact with the first resin layer and an upper surface opposite to the lower surface. The second metallic layer is provided in the second resin layer and has a metallic lower surface and a metallic upper surface opposite to the metallic lower surface. The metallic upper surface is exposed from the second resin layer. The metallic upper surface of the second metallic layer is at least partially lower in height from the semiconductor stacked body than the upper surface of the second resin layer.
Abstract translation: 发光器件包括半导体发光元件，第一树脂层，第一金属层，第二树脂层和第二金属层。 半导体发光元件包括半导体层叠体和设置在半导体层叠体一侧的电极。 第二树脂层设置在第一树脂层上，并且具有与第一树脂层接触的下表面和与下表面相对的上表面。 第二金属层设置在第二树脂层中，并且具有与金属下表面相对的金属下表面和金属上表面。 金属上表面从第二树脂层露出。 第二金属层的金属上表面比第二树脂层的上表面至少部分地低于半导体层叠体的高度。
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公开(公告)号：US20140339587A1
公开(公告)日：2014-11-20
申请号：US14279890
申请日：2014-05-16
Applicant: NICHIA CORPORATION
Inventor： Hirofumi KAWAGUCHI , Akinori YONEDA , Hisashi KASAI , Kazuki KASHIMOTO , Masafumi ITASAKA
CPC classification number: H01L33/405 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/42 , H01L2933/0016
Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.
Abstract translation: 一种半导体发光元件，具有：半导体层叠体; 包含设置在p型半导体层的上表面上的Ag的全表面电极; 覆盖全表面电极的表面的覆盖电极设置成在全表面电极的外边缘处与p型半导体层的上表面接触，并由Al基金属材料制成; p侧电极，设置在所述盖电极的表面的一部分上; 覆盖所述覆盖电极的其他表面并且包含形成所述覆盖电极的金属材料的氧化物的金属氧化物膜; 并且提供由氧化物制成并覆盖金属氧化物膜的表面的绝缘膜。
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