Invention Application
- Patent Title: LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14734835Application Date: 2015-06-09
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Publication No.: US20150364653A1Publication Date: 2015-12-17
- Inventor: Jong Hyeon Chae
- Applicant: Seoul Viosys Co., Ltd.
- Priority: KR10-2014-0072356 20140613; KR10-2014-0081058 20140630
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/54 ; H01L33/46 ; H01L33/56 ; H01L33/38 ; H01L33/42

Abstract:
Exemplary embodiments provide a light emitting diode that includes: at least one lower electrode providing a passage for electric current; a light emitting structure placed over the at least one lower electrode to be electrically connected to the lower electrode, the light emitting structure is disposed to form at least one via-hole; a reflective electrode layer placed between the at least one lower electrode and the light emitting structure; and an electrode pattern formed around the light emitting structure and electrically connecting the lower electrode to the light emitting structure through the via-hole.
Public/Granted literature
- US09608168B2 Light emitting diode Public/Granted day:2017-03-28
Information query
IPC分类: