发明申请
- 专利标题： CHEMICAL MECHANICAL POLISHING LAYER FORMULATION WITH CONDITIONING TOLERANCE
- 专利标题（中）： 化学机械抛光层配方与耐候性
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申请号： US14314327申请日： 2014-06-25
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公开(公告)号： US20150375362A1公开(公告)日： 2015-12-31
- 发明人: Bainian Qian , Marty W. DeGroot , Mark F. Sonnenschein
- 申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc. , Dow Global Technologies LLC
- 主分类号： B24B37/24
- IPC分类号： B24B37/24 ; H01F41/00 ; G02B1/12 ; B24B37/20 ; H01L21/306
摘要：
A chemical mechanical polishing pad is provided containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition exhibits an acid number of ≧0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance of ≧80%.
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