公开(公告)号：US20230339067A1

公开(公告)日：2023-10-26

申请号：US17660096

申请日：2022-04-21

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Zhan Liu ,  Nan-Rong Chiou ,  Michael E. Mills

IPC分类号： B24B37/24 ,  C08L75/04 ,  C08L27/18 ,  B24B37/26

CPC分类号： B24B37/24 ,  C08L75/04 ,  C08L27/18 ,  B24B37/26

摘要： A chemical mechanical polishing pad comprising a substantially non-porous polishing layer, the polishing layer comprising a polymer matrix and agglomerates of polymer particles embedded in the polymer matrix wherein the polymer particles are present in amounts of 5 to 35 weight percent based on weight of the polishing layer, the agglomerates have a size of greater than 1 μm, the polymer particles have a tensile modulus higher than a tensile modulus of the polymer matrix. The polishing layer viscoelastic and has a GEL of greater than 1000 Pa−1. Polishing a metal/insulator composite with such a pad can result in low amounts of dishing of the metal feature.

公开(公告)号：US11718769B2

公开(公告)日：2023-08-08

申请号：US17678148

申请日：2022-02-23

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Yi Guo

IPC分类号： C09G1/02 ,  C09G1/04 ,  H01L21/304 ,  H01L21/768

CPC分类号： C09G1/02 ,  C09G1/04 ,  H01L21/304 ,  H01L21/76819

摘要： A chemical mechanical polishing composition includes water, colloidal silica abrasive particles with a silica core containing a nitrogen species, a cerium compound coating including cerium oxide, cerium hydroxide or mixtures thereof, and a positive zeta potential, optionally an oxidizing agent, optionally a pH adjusting agent, optionally a biocide and optionally a surfactant. The chemical mechanical polishing composition has a pH of less than 7. Also described is a method of polishing a substrate containing silicon dioxide and a method of making the composite colloidal silica particles with the coating of cerium oxide, cerium hydroxide or mixtures thereof. The chemical mechanical polishing composition can be used to enhance the removal of silicon dioxide from a substrate in an acid environment.

公开(公告)号：US11712777B2

公开(公告)日：2023-08-01

申请号：US16436019

申请日：2019-06-10

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Matthew R. Gadinski

IPC分类号： B24B37/24 ,  B24B37/22

CPC分类号： B24B37/24 ,  B24B37/22

摘要： The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 μm rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

公开(公告)号：US11667061B2

公开(公告)日：2023-06-06

申请号：US16852420

申请日：2020-04-18

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Wei-Wen Tsai ,  Katsumasa Kawabata ,  Hui Bin Huang ,  Akane Uehara ,  Yosuke Takei

IPC分类号： B29C39/18 ,  B29C43/30 ,  B24B37/24 ,  C08J5/18 ,  B29C43/00 ,  B29C39/14 ,  B29L31/00 ,  B29K75/00

CPC分类号： B29C39/18 ,  B24B37/24 ,  B29C39/14 ,  B29C43/003 ,  B29C43/305 ,  C08J5/18 ,  B29K2075/00 ,  B29L2031/736 ,  C08J2375/04

摘要： The invention provides a method of forming porous polyurethane polishing pad that includes feeding liquid polyurethane onto a web sheet with a doctor blade while back tensioning the web. Coagulating liquid polyurethane onto the web sheet forms a two-layer substrate. The two-layer substrate has a porous matrix wherein the porous matrix has large pores extending upward from a base surface and open to an upper surface. Spring-arm sections connect lower and upper sections of the large pores.

公开(公告)号：US20230082181A1

公开(公告)日：2023-03-16

申请号：US17472607

申请日：2021-09-11

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Matthew R. Gadinski ,  Joseph So

IPC分类号： B24B37/14

摘要： The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The pad includes a polyurea-containing polishing layer having a polyurea-containing matrix. The polyurea-containing matrix includes a soft phase formed from two or more aliphatic fluorine-free polymer groups capping two ends of at least one aliphatic fluorinated polymer group. The polyurea-containing matrix also includes a hard phase that contains a urea group formed from isocyanate group capping outer ends of the aliphatic fluorine-free polymer groups reacted with an amine-containing curative agent. Biuret crosslinking groups connect some of the soft segments to hard segments. The polishing layer is hydrophilic during polishing in shear conditions.

公开(公告)号：US20230078023A1

公开(公告)日：2023-03-16

申请号：US17472610

申请日：2021-09-11

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Matthew R. Gadinski ,  Joseph So

IPC分类号： B24B37/24 ,  H01L21/321

摘要： The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

公开(公告)号：US11548114B1

公开(公告)日：2023-01-10

申请号：US17472609

申请日：2021-09-11

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Matthew R. Gadinski ,  Joseph So

IPC分类号： B24B37/24 ,  H01L21/304 ,  B24B37/26 ,  C08L75/04 ,  C09K3/14 ,  C09G1/02

摘要： The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

公开(公告)号：US11524385B2

公开(公告)日：2022-12-13

申请号：US16434645

申请日：2019-06-07

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： John R. McCormick

IPC分类号： B24B37/26

摘要： A polishing pad useful in chemical mechanical polishing comprises a base, and a plurality of structures protruding from the base wherein a portion of the plurality of structures are defined by a cross section having a perimeter which defines an area. The perimeter can be defined by parametric equations and can have six or more inflection points or the cross-section can comprise three or more lobes. The cross-section has a Delta parameter in the range of 0.2 to 0.75.

公开(公告)号：US20220348788A1

公开(公告)日：2022-11-03

申请号：US17241399

申请日：2021-04-27

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Yi Guo

IPC分类号： C09G1/02 ,  C09K13/00 ,  C09K13/02 ,  H01L21/3105

摘要： An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

公开(公告)号：US20220314392A1

公开(公告)日：2022-10-06

申请号：US17218716

申请日：2021-03-31

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Mohammad T. Islam

IPC分类号： B24B37/24 ,  B24B37/04

摘要： A polishing pad having a polishing portion comprising a polymer matrix and rate enhancing lamellar particles that include a phosphate or an arsenate of group III-A or group IV- A metals can be effective in chemical mechanical polishing especially when using a slurry comprising particles having a positive charge in slurry conditions.