Invention Application
- Patent Title: METHODS FOR FORMING A MOLECULAR DOPANT MONOLAYER ON A SUBSTRATE
- Patent Title (中): 在基材上形成分子多晶硅单体的方法
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Application No.: US14758784Application Date: 2014-01-06
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Publication No.: US20150380249A1Publication Date: 2015-12-31
- Inventor: Roman GOUK , Steven VERHAVERBEKE
- Applicant: APPLIED MATERIALS, INC.
- International Application: PCT/US14/10324 WO 20140106
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L29/66 ; H01L21/02
Abstract:
Methods for forming a conformal dopant monolayer on a substrate are provided. In one embodiment, a method for forming a semi-conductor device on a substrate includes forming a charged layer on a silicon containing surface disposed on a substrate, wherein the charged layer has a first charge, and forming a dopant monolayer on the charged layer, wherein dopants formed in the dopant monolayer include at least one of a group III or group V atoms.
Public/Granted literature
- US09490125B2 Methods for forming a molecular dopant monolayer on a substrate Public/Granted day:2016-11-08
Information query
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