公开(公告)号：US20220020590A1

公开(公告)日：2022-01-20

申请号：US16928252

申请日：2020-07-14

申请人： Applied Materials, Inc.

发明人： Wei-Sheng LEI ,  Kurtis LESCHKIES ,  Roman GOUK ,  Steven VERHAVERBEKE ,  Visweswaren SIVARAMAKRISHNAN

IPC分类号： H01L21/268 ,  H01L21/768 ,  H01L21/67 ,  H01L21/68 ,  B23K26/00 ,  B23K26/386

摘要： In an embodiment is provided a method of forming a blind via in a substrate comprising a mask layer, a conductive layer, and a dielectric layer that includes conveying the substrate to a scanning chamber; determining one or more properties of the blind via, the one or more properties comprising a top diameter, a bottom diameter, a volume, or a taper angle of about 80° or more; focusing a laser beam at the substrate to remove at least a portion of the mask layer; adjusting the laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via. In some embodiments, the mask layer can be pre-etched. In another embodiment is provided an apparatus for forming a blind via in a substrate.

公开(公告)号：US20220013375A1

公开(公告)日：2022-01-13

申请号：US17329948

申请日：2021-05-25

申请人： Applied Materials, Inc.

发明人： Jean DELMAS ,  Steven VERHAVERBEKE ,  Kurtis LESCHKIES

IPC分类号： H01L21/67 ,  F27B9/36 ,  H01L21/677 ,  H01L21/324

摘要： Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

公开(公告)号：US20180374696A1

公开(公告)日：2018-12-27

申请号：US15844989

申请日：2017-12-18

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN

IPC分类号： H01L21/02 ,  H01L23/538 ,  H01L21/027 ,  H01L21/311 ,  G03F7/00 ,  H01L21/48

摘要： Embodiments of the present disclosure generally describe methods of forming one or more device terminal redistribution layers using imprint lithography. The methods disclosed herein enable the formation of high aspect ratio interconnect structures at lower costs than conventional photolithography and etch processes. Further, the processes and methods described herein desirably remove, reduce, and/or substantially eliminate voids in the surrounding polymer layer formed during the polymer deposition process or subsequent thereto.

公开(公告)号：US20180350563A1

公开(公告)日：2018-12-06

申请号：US15991877

申请日：2018-05-29

申请人： Applied Materials, Inc.

发明人： Pramit MANNA ,  Abhijit Basu MALLICK ,  Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Sanjay KAMATH ,  Zongbin WANG ,  Hanwen ZHANG ,  Shishi JIANG

IPC分类号： H01J37/32

摘要： Embodiments of the disclosure generally relate to a method of processing a semiconductor substrate at a temperature less than 250 degrees Celsius. In one embodiment, the method includes loading the substrate with the deposited film into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure greater than about 2 bars, and maintaining the pressure vessel at a temperature between a condensation point of the processing gas and about 250 degrees Celsius.

公开(公告)号：US20180337061A1

公开(公告)日：2018-11-22

申请号：US15599920

申请日：2017-05-19

申请人： Applied Materials, Inc.

发明人： Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Ziqing DUAN ,  Abhijit Basu MALLICK

IPC分类号： H01L21/32 ,  H01L21/306

摘要： Embodiments described herein generally relate methods for selective deposition of carbon structures. In one embodiment, a method includes forming energized carbon species in a process chamber, diffusing the energized carbon species through a metal layer, wherein the metal layer is disposed on a first surface of a first material that is coplanar with a second surface of a second material, and forming a carbon structure between the first surface of the first material and the metal layer from the energized carbon species. Because the carbon structure is selectively deposited on the first surface and self-aligned to the first material, the possibility of overlay or misalignment of subsequent device layers formed on the first surface of the first material after the removal of the carbon structure is significantly reduced.

公开(公告)号：US20170148624A1

公开(公告)日：2017-05-25

申请号：US15325419

申请日：2015-07-10

申请人： Applied Materials, Inc.

发明人： Steven VERHAVERBEKE ,  Han-Wen CHEN ,  Roman GOUK ,  Kurtis LESCHKIES

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/0206 ,  H01J37/32357 ,  H01L21/02101 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02334 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67207

摘要： The present disclosure generally relates to apparatus and methods for forming a low-k dielectric material on a substrate. The method includes various substrate processing steps utilizing a wet processing chamber, a solvent exchange chamber, and a supercritical fluid chamber. More specifically, a dielectric material in an aqueous solution may be deposited on the substrate and a solvent exchange process may be performed to prepare the substrate for a supercritical drying process. During the supercritical drying process, liquids present in the solution and remaining on the substrate from the solvent exchange process are removed via sublimation during the supercritical drying process. The resulting dielectric material formed on the substrate may be considered a silica aerogel which exhibits a very low k-value.

公开(公告)号：US20150380249A1

公开(公告)日：2015-12-31

申请号：US14758784

申请日：2014-01-06

申请人： APPLIED MATERIALS, INC.

发明人： Roman GOUK ,  Steven VERHAVERBEKE

IPC分类号： H01L21/225 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L21/2254 ,  H01L21/02043 ,  H01L21/02057 ,  H01L21/02101 ,  H01L29/66795 ,  H01L29/66803

摘要： Methods for forming a conformal dopant monolayer on a substrate are provided. In one embodiment, a method for forming a semi-conductor device on a substrate includes forming a charged layer on a silicon containing surface disposed on a substrate, wherein the charged layer has a first charge, and forming a dopant monolayer on the charged layer, wherein dopants formed in the dopant monolayer include at least one of a group III or group V atoms.

摘要翻译： 提供了在衬底上形成保形掺杂剂单层的方法。 在一个实施例中，在衬底上形成半导体器件的方法包括在设置在衬底上的含硅表面上形成带电层，其中带电层具有第一电荷，并且在带电层上形成掺杂剂单层， 其中在所述掺杂剂单层中形成的掺杂剂包括III族或V族原子中的至少一种。

公开(公告)号：US20150214475A1

公开(公告)日：2015-07-30

申请号：US14677761

申请日：2015-04-02

申请人： Applied Materials, Inc.

发明人： Roman GOUK ,  Steven VERHAVERBEKE ,  Alexander KONTOS ,  Adolph Miller ALLEN ,  Kevin MORAES

IPC分类号： H01L43/12 ,  H01F41/34

CPC分类号： H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

摘要： A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

摘要翻译： 描述了在基板上形成具有磁特性图案的磁性层的方法和装置。 该方法包括使用金属氮化物硬掩模层通过等离子体曝光对磁性层进行图案化。 使用具有氧化硅图案负材料的纳米压印图案化工艺对金属氮化物层进行构图。 在使用含卤素和含氧远距离等离子体的金属氮化物中形成图案，并且在使用苛性湿法剥离法等离子体暴露后除去。 所有加工都是在低温下进行，以避免热损坏磁性材料。

公开(公告)号：US20140178728A1

公开(公告)日：2014-06-26

申请号：US14190957

申请日：2014-02-26

申请人： Applied Materials, Inc.

发明人： Omkaram NALAMASU ,  Steven VERHAVERBEKE

IPC分类号： H01G9/048 ,  H01M10/0587 ,  H01M4/04 ,  H01M4/134

CPC分类号： H01G9/048 ,  C25D11/32 ,  H01G9/0032 ,  H01G9/055 ,  H01G9/07 ,  H01G11/26 ,  H01G11/28 ,  H01G11/86 ,  H01M4/0404 ,  H01M4/134 ,  H01M10/0587 ,  Y02E60/13

摘要： A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor.

摘要翻译： 一种制造具有大表面积电极的能量存储装置的方法包括：提供导电基板; 在所述导电基板上沉积半导体层，所述半导体层是第一电极; 阳极氧化半导体层，其中阳极氧化在半导体层中形成孔，增加第一电极的表面积; 在阳极氧化之后，提供电解质和第二电极以形成能量存储装置。 衬底可以是连续膜，并且可以使用线性加工工具来制造能量存储装置的电极。 半导体可以是硅，并且沉积工具可以是热喷涂工具。 此外，半导体层可以是无定形的。 储能装置可以卷成圆柱形。 储能装置可以是电池，电容器或超级电容器。

公开(公告)号：US20140147700A1

公开(公告)日：2014-05-29

申请号：US14170009

申请日：2014-01-31

申请人： Applied Materials, Inc.

发明人： Christopher Dennis BENCHER ,  Roman GOUK ,  Steven VERHAVERBEKE ,  Li-Qun XIA ,  Yong-Won LEE ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Peter I. PORSHNEV

IPC分类号： G11B5/74 ,  G11B5/85

CPC分类号： G11B5/85 ,  G11B5/743 ,  G11B5/855

摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

摘要翻译： 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基板上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。