发明申请
- 专利标题： SEMICONDUCTOR CHIP AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体芯片及其制造方法
-
申请号： US14717606申请日： 2015-05-20
-
公开(公告)号： US20150380367A1公开(公告)日： 2015-12-31
- 发明人: Fucheng CHEN
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 优先权： CN201410308869.2 20140630
- 主分类号： H01L23/00
- IPC分类号： H01L23/00
摘要：
A chip includes a substrate and a dielectric layer disposed on the substrate. The dielectric layer includes a first dielectric region and a second dielectric region surrounding an outer periphery of the first dielectric region. A top surface of the first dielectric region is disposed below a top surface of the second dielectric region. The chip further includes a metal pad disposed in a through-hole in the first dielectric region and contacting a portion of the substrate.
公开/授权文献
- US09293430B2 Semiconductor chip and method of manufacturing the same 公开/授权日：2016-03-22
信息查询
IPC分类:
