公开(公告)号：US20150187736A1

公开(公告)日：2015-07-02

申请号：US14459962

申请日：2014-08-14

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Fucheng CHEN ,  Yao LIU ,  Herb He HUANG

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L24/09 ,  H01L24/89 ,  H01L25/50 ,  H01L2224/03614 ,  H01L2224/0382 ,  H01L2224/08145 ,  H01L2224/80355 ,  H01L2225/06513 ,  H01L2924/06 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device may include providing a first dielectric layer and a first set of conductive pads on a first substrate. Each conductive pad of the first set of conductive pads may be positioned between portions of the first dielectric layer. The method may further include providing a first insulating material layer to cover the first dielectric layer and the first set of conductive pads. The method may further include removing portions of the first insulating material layer to form a first insulating layer. Openings of the first insulating layer may expose the first set of conductive pads.

摘要翻译： 半导体器件的制造方法可以包括在第一衬底上提供第一电介质层和第一组导电焊盘。 第一组导电焊盘的每个导电焊盘可以位于第一介电层的部分之间。 该方法还可以包括提供第一绝缘材料层以覆盖第一介电层和第一组导电焊盘。 该方法还可以包括去除第一绝缘材料层的部分以形成第一绝缘层。 第一绝缘层的开口可露出第一组导电焊盘。

公开(公告)号：US20150185418A1

公开(公告)日：2015-07-02

申请号：US14549718

申请日：2014-11-21

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

发明人： Fucheng CHEN ,  Herb He HUANG

IPC分类号： G02B6/136 ,  H01L23/48 ,  G02B6/132 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/768

CPC分类号： G02B6/136 ,  G02B6/12002 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76804 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a substrate may include processing a substrate material member to form a first remaining portion. The first remaining portion has a first cavity. A sidewall the first cavity is oriented at a first angle with respect to at least one of a horizontal plane and a bottom side of the first remaining portion. The method may further include providing a sacrificial material member in the first cavity. The method may further include processing the sacrificial material member when processing the first remaining portion to remove the sacrificial material member and to form a second remaining portion. The second remaining portion has a second cavity. A sidewall the second cavity is oriented at a second angle with respect to at least one of the horizontal plane and a bottom side of the second remaining portion. The second angle is smaller than the first angle.

摘要翻译： 基板的制造方法可以包括处理基板材料构件以形成第一剩余部分。 第一剩余部分具有第一腔。 第一腔的侧壁相对于第一剩余部分的水平面和底侧中的至少一个被定向成第一角度。 该方法还可以包括在第一空腔中提供牺牲材料构件。 该方法还可以包括在处理第一剩余部分以去除牺牲材料构件并形成第二剩余部分时处理牺牲材料构件。 第二剩余部分具有第二腔。 第二腔的侧壁相对于第二剩余部分的水平面和底侧中的至少一个定位成第二角度。 第二角度小于第一角度。

公开(公告)号：US20150380367A1

公开(公告)日：2015-12-31

申请号：US14717606

申请日：2015-05-20

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Fucheng CHEN

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02175 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0381 ,  H01L2224/03831 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/06051 ,  H01L2224/061 ,  H01L2224/06505 ,  H01L2224/08058 ,  H01L2224/08111 ,  H01L2224/08145 ,  H01L2224/10145 ,  H01L2224/1148 ,  H01L2224/1181 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/27831 ,  H01L2224/29187 ,  H01L2224/32145 ,  H01L2224/73101 ,  H01L2224/73104 ,  H01L2224/73201 ,  H01L2224/73204 ,  H01L2224/80011 ,  H01L2224/80012 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81011 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81895 ,  H01L2224/81948 ,  H01L2224/83011 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83896 ,  H01L2224/83948 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/06555 ,  H01L2225/06593 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/05 ,  H01L2224/13 ,  H01L2224/08 ,  H01L2224/16 ,  H01L2224/80 ,  H01L2924/00

摘要： A chip includes a substrate and a dielectric layer disposed on the substrate. The dielectric layer includes a first dielectric region and a second dielectric region surrounding an outer periphery of the first dielectric region. A top surface of the first dielectric region is disposed below a top surface of the second dielectric region. The chip further includes a metal pad disposed in a through-hole in the first dielectric region and contacting a portion of the substrate.

摘要翻译： 芯片包括衬底和设置在衬底上的电介质层。 电介质层包括第一电介质区域和围绕第一电介质区域的外围的第二电介质区域。 第一电介质区域的顶表面设置在第二电介质区域的顶表面下方。 芯片还包括设置在第一电介质区域中的通孔中并与衬底的一部分接触的金属焊盘。