Invention Application
US20150380448A1 BACK SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH SEMICONDUCTOR CAPACITOR CONNECTED TO FLOATING DIFFUSION NODE
有权
具有连接到浮动扩散节点的半导体电容器的背侧照明半导体结构
- Patent Title: BACK SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH SEMICONDUCTOR CAPACITOR CONNECTED TO FLOATING DIFFUSION NODE
- Patent Title (中): 具有连接到浮动扩散节点的半导体电容器的背侧照明半导体结构
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Application No.: US14659956Application Date: 2015-03-17
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Publication No.: US20150380448A1Publication Date: 2015-12-31
- Inventor: CHING-WEI CHEN , WEN-CHENG YEN
- Applicant: PIXART IMAGING INC.
- Priority: TW103122206 20140626; TW103138137 20141103
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L49/02
Abstract:
There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the influence thereto by incident light and enhance the light absorption efficiency.
Public/Granted literature
Information query
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