Manufacturing Method of Semiconductor Device

Invention Application

US20160005604A1 Manufacturing Method of Semiconductor Device 有权

Title translation: 半导体器件的制造方法

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Patent Title: Manufacturing Method of Semiconductor Device
Patent Title (中): 半导体器件的制造方法
Application No.: US14481008

Application Date: 2014-09-09
Publication No.: US20160005604A1

Publication Date: 2016-01-07
Inventor: Yasuhito YOSHIMIZU , Mitsuhiro OMURA , Hisashi OKUCHI , Satoshi WAKATSUKI , Tsubasa IMAMURA
Applicant: Kabushiki Kaisha Toshiba
Main IPC: H01L21/033
IPC: H01L21/033

Manufacturing Method of Semiconductor Device

Abstract:

According to an embodiment, a manufacturing method of a semiconductor device includes: forming a first film on a processing target by using a first material; forming a second film on the first film by using a second material; selectively removing the second and first films to provide an opening pierced in the second and first films; selectively forming a metal film on an inner surface of the opening in the first film; and processing the processing target by using the metal film as a mask.

Abstract(Chinese):

根据实施例，半导体器件的制造方法包括：通过使用第一材料在处理对象上形成第一膜; 通过使用第二材料在所述第一膜上形成第二膜; 选择性地去除第二和第一膜以提供在第二和第一膜中刺穿的开口; 在第一膜的开口的内表面上选择性地形成金属膜; 并且通过使用金属膜作为掩模来处理处理目标。

Public/Granted literature

US09384980B2 Manufacturing method of semiconductor device Public/Granted day:2016-07-05

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/027	..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜
H01L21/033	...包括无机层的