A temporary bonding laminate for use in the manufacture of semiconductor devices and a method for manufacturing semiconductor devices are provided. A member to be processed (a semiconductor wafer or the like) can be temporarily supported securely and readily during a mechanical or chemical process of the member, and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process. The laminate includes: (A) a release layer and (B) an adhesive layer. The release layer contains (a1) a compound being liquid at 25° C. and having a 5% mass reduction temperature of 250° C. or more when measured in a nitrogen gas stream under heating conditions of a constant heating rate of 20° C./min; and (a2) a binder having a 5% mass reduction temperature of 250° C. or more when measured under the same conditions.