WATER-DEVELOPABLE FLEXOGRAPHIC PRINTING PLATE PRECURSOR, FLEXOGRAPHIC PRINTING PLATE, AND PHOTOSENSITIVE RESIN COMPOSITION

    公开(公告)号:US20210165322A1

    公开(公告)日:2021-06-03

    申请号:US17169684

    申请日:2021-02-08

    摘要: An object of the present invention is to provide a water-developable flexographic printing plate precursor, a flexographic printing plate, and a photosensitive resin composition, which can maintain good water developability and can suppress adhesion and aggregation of dispersion in the developer in a case of repeated use and disposal of the aqueous developer. The water-developable flexographic printing plate precursor of the present invention is a water-developable flexographic printing plate precursor including a photosensitive layer, in which the photosensitive layer contains water-dispersible particles, and the water-dispersible particles have a core containing a polymer and having a glass transition temperature of 0° C. or lower and have a shell containing a polymer and having a glass transition temperature of 10° C. or higher.

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    3.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20140322893A1

    公开(公告)日:2014-10-30

    申请号:US14324626

    申请日:2014-07-07

    IPC分类号: H01L23/00 H01L21/683

    摘要: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray, radiation or heat to irradiation of the adhesive layer with an actinic ray, radiation or heat, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching a first surface of the treated member from the adhesive layer of the adhesive support, wherein the irradiation of the adhesive layer with an actinic ray, radiation or heat is conducted so that adhesiveness decreases toward an outer surface from an inner surface on the substrate side of the adhesive layer.

    摘要翻译: 一种用于制造具有处理部件的半导体器件的方法,包括:对具有基底的粘合剂支撑体和能够增加或降低粘合性的粘合剂层进行照射时的光化射线,辐射或加热以对所述粘合剂层进行照射 光化射线,辐射或热,将待处理部件的第一表面粘附到粘合剂支撑体的粘合剂层上,对不同于被处理物体的第一表面的第二表面进行机械或化学处理 构件,以获得处理构件,并且从粘合剂支撑体的粘合剂层分离处理构件的第一表面,其中进行具有光化射线,辐射或热的粘合剂层的照射,使得粘附性朝向外表面减小 从粘合剂层的基板侧的内表面。

    TEMPORARY BONDING LAMINATES FOR USED IN MANUFACTURE OF SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
    4.
    发明申请
    TEMPORARY BONDING LAMINATES FOR USED IN MANUFACTURE OF SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES 有权
    用于制造半导体器件的临时粘结层压板及制造半导体器件的方法

    公开(公告)号:US20160013088A1

    公开(公告)日:2016-01-14

    申请号:US14865755

    申请日:2015-09-25

    摘要: A temporary bonding laminate for use in the manufacture of semiconductor devices and a method for manufacturing semiconductor devices are provided. A member to be processed (a semiconductor wafer or the like) can be temporarily supported securely and readily during a mechanical or chemical process of the member, and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process. The laminate includes: (A) a release layer and (B) an adhesive layer. The release layer contains (a1) a compound being liquid at 25° C. and having a 5% mass reduction temperature of 250° C. or more when measured in a nitrogen gas stream under heating conditions of a constant heating rate of 20° C./min; and (a2) a binder having a 5% mass reduction temperature of 250° C. or more when measured under the same conditions.

    摘要翻译: 提供了用于制造半导体器件的临时粘接层压板和半导体器件的制造方法。 待加工构件(半导体晶片等)可以在构件的机械或化学过程中被牢固且容易地暂时支撑,然后即使在经过处理的构件之后,处理构件也可以容易地从临时支撑件释放而不损坏处理构件 高温过程。 层压体包括:(A)剥离层和(B)粘合剂层。 剥离层含有(a1)在25℃恒温下加热条件下在氮气流中测定时,在25℃下为5%的质量还原温度为5 5% ./min; 和(a2)在相同条件下测定时,具有250℃以上5%质量降低温度的粘合剂。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    9.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号:US20140318697A1

    公开(公告)日:2014-10-30

    申请号:US14328191

    申请日:2014-07-10

    IPC分类号: H01L21/673

    摘要: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray or radiation to pattern exposure of the adhesive layer to provide a high adhesive region and a low adhesive region in the adhesive layer, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching the first surface of the treated member from the adhesive layer of the adhesive support.

    摘要翻译: 一种用于制造具有处理部件的半导体器件的方法,包括:对具有基底的粘合剂支撑体和能够增加或降低粘附性的粘合剂层进行照射时,用光化射线或辐射照射粘合剂层以图案曝光, 高粘合剂区域和粘合剂层中的低粘合剂区域,将被处理构件的第一表面粘附到粘合剂支撑体的粘合剂层上,对不同于第一表面的第二表面施加机械或化学处理 待处理的构件以获得处理的构件,并且将所处理的构件的第一表面从粘合剂支撑体的粘合剂层分离。