发明申请
- 专利标题： FINFET DEVICE WITH GATE OXIDE LAYER
- 专利标题（中）： FINFET器件与栅极氧化层
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申请号： US14328350申请日： 2014-07-10
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公开(公告)号： US20160013308A1公开(公告)日： 2016-01-14
- 发明人: Tung Ying Lee , Yu-Lien Huang , I-Ming Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/51 ; H01L29/36 ; H01L29/66
摘要：
The present disclosure provides a semiconductor structure. In accordance with some embodiments, the semiconductor structure includes a substrate, one or more fins each including a first semiconductor layer formed over the substrate, an oxide layer formed wrapping over an upper portion of each of the one or more fins, and a gate stack including a high-K (HK) dielectric layer and a metal gate (MG) electrode formed wrapping over the oxide layer. The first semiconductor layer may include silicon germanium (SiGex), and the oxide layer may include silicon germanium oxide (SiGexOy).
公开/授权文献
- US09257558B2 FinFET device with gate oxide layer 公开/授权日：2016-02-09
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