发明申请
- 专利标题： VARIABLE RESISTIVE MEMORY DEVICE
- 专利标题（中）： 可变电阻存储器件
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申请号： US14791619申请日： 2015-07-06
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公开(公告)号： US20160013406A1公开(公告)日： 2016-01-14
- 发明人: JIN-WOO LEE , YOUN-SEON KANG
- 申请人： JIN-WOO LEE , YOUN-SEON KANG
- 优先权： KR10-2014-0085354 20140708
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A variable resistance memory device includes a first electrode layer, a variable resistance layer disposed on the first electrode layer, a second electrode layer disposed on the variable resistance layer, a barrier layer disposed between the variable resistance layer and one of the first and second electrode layers, and a buffer layer disposed between the barrier layer and one of the first and second electrode layers.
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IPC分类:
