Invention Application
US20160019964A1 MEMORY DEVICE WITH COMBINED NON-VOLATILE MEMORY (NVM) AND VOLATILE MEMORY
有权
具有组合非易失性存储器(NVM)和易失性存储器的存储器件
- Patent Title: MEMORY DEVICE WITH COMBINED NON-VOLATILE MEMORY (NVM) AND VOLATILE MEMORY
- Patent Title (中): 具有组合非易失性存储器(NVM)和易失性存储器的存储器件
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Application No.: US14331274Application Date: 2014-07-15
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Publication No.: US20160019964A1Publication Date: 2016-01-21
- Inventor: MICHAEL A. SADD , ANIRBAN ROY
- Applicant: MICHAEL A. SADD , ANIRBAN ROY
- Main IPC: G11C14/00
- IPC: G11C14/00

Abstract:
A memory device includes a volatile memory cell, a non-volatile memory cell, and a transfer system connected between the volatile memory cell and the non-volatile memory cell. The transfer circuit allows data transfer from the volatile memory cell to the non-volatile memory cell when the memory device is operating in a first mode, and from the non-volatile memory cell to the volatile memory cell when the memory device is operating in a second mode.
Public/Granted literature
- US09697897B2 Memory device with combined non-volatile memory (NVM) and volatile memory Public/Granted day:2017-07-04
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