Invention Application
- Patent Title: Wiring Substrate and Semiconductor Device
- Patent Title (中): 接线基板和半导体器件
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Application No.: US14791670Application Date: 2015-07-06
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Publication No.: US20160020163A1Publication Date: 2016-01-21
- Inventor: Noriyoshi SHIMIZU , Yusuke GOZU , Jun FURUICHI , Akio ROKUGAWA , Takashi Ito
- Applicant: Shinko Electric Industries Co., Ltd.
- Priority: JP2014146231 20140716; JP2014228803 20141111
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H05K1/18

Abstract:
A wiring substrate includes a first wiring structure and a second wiring structure. The first wiring structure includes a first insulating layer, which covers a first wiring layer, and a via wiring. A first through hole of the first insulating layer is filled with the via wiring. The second wiring structure includes a second wiring layer and a second insulating layer. The second wiring layer is formed on an upper surface of the first insulating layer and an upper end surface of the via wiring. The second wiring layer partially includes a roughened surface. The second insulating layer is stacked on the upper surface of the first insulating layer and covers the second wiring layer. The second wiring structure has a higher wiring density than the first wiring structure. The roughened surface of the second wiring layer has a smaller surface roughness than the first wiring layer.
Public/Granted literature
- US09875957B2 Wiring substrate and semiconductor device Public/Granted day:2018-01-23
Information query
IPC分类: