发明申请
US20160025800A1 SYSTEMS AND METHODS FOR TEST CIRCUITRY FOR INSULATED-GATE BIPOLAR TRANSISTORS
有权
用于绝缘栅双极晶体管的测试电路的系统和方法
- 专利标题： SYSTEMS AND METHODS FOR TEST CIRCUITRY FOR INSULATED-GATE BIPOLAR TRANSISTORS
- 专利标题（中）： 用于绝缘栅双极晶体管的测试电路的系统和方法
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申请号： US14341269申请日： 2014-07-25
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公开(公告)号： US20160025800A1公开(公告)日： 2016-01-28
- 发明人: THIERRY SICARD
- 申请人： THIERRY SICARD
- 主分类号： G01R31/26
- IPC分类号： G01R31/26
摘要：
A saturation edge detection circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”) includes a first input operable to receive an on signal, a second input coupled to an IGBT driver circuit, and an output coupled to a control electrode of the IGBT. The output indicates a change in a state of a saturation voltage associated with the IGBT during operation of the IGBT.
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