Invention Application
US20160027863A1 Integrated Circuitry, Methods of Forming Capacitors, and Methods of Forming Integrated Circuitry Comprising an Array of Capacitors and Circuitry Peripheral to the Array
审中-公开
集成电路，形成电容器的方法以及形成包含电容器阵列和电路周边阵列的集成电路的方法
- Patent Title: Integrated Circuitry, Methods of Forming Capacitors, and Methods of Forming Integrated Circuitry Comprising an Array of Capacitors and Circuitry Peripheral to the Array
- Patent Title (中): 集成电路，形成电容器的方法以及形成包含电容器阵列和电路周边阵列的集成电路的方法
-
Application No.: US14791114Application Date: 2015-07-02
-
Publication No.: US20160027863A1Publication Date: 2016-01-28
- Inventor: Brett W. Busch , Mingtao Li , Lequn Jennifer Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/525
Abstract:
A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.
Information query
IPC分类:
