发明申请
- 专利标题： Methods Of Etching Films With Reduced Surface Roughness
- 专利标题（中）： 蚀刻表面粗糙度薄膜的方法
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申请号： US14793977申请日： 2015-07-08
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公开(公告)号： US20160032460A1公开(公告)日： 2016-02-04
- 发明人: Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
- 申请人： Applied Materials, Inc.
- 主分类号： C23F1/12
- IPC分类号： C23F1/12 ; C23F4/00 ; C30B33/12
摘要：
Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
公开/授权文献
- US09540736B2 Methods of etching films with reduced surface roughness 公开/授权日：2017-01-10
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