公开(公告)号：US20240332001A1

公开(公告)日：2024-10-03

申请号：US18128484

申请日：2023-03-30

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Jeffrey W. Anthis

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/0228

Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The substrate may define a feature. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a silicon-carbon-and-nitrogen-containing material on the substrate. The methods may include providing a second precursor to the semiconductor processing chamber. The methods may include contacting the substrate with the second precursor. The contacting may form the silicon-carbon-and-nitrogen-containing material on the substrate. The silicon-carbon-and-nitrogen-containing material may be void free.

公开(公告)号：US20240200188A1

公开(公告)日：2024-06-20

申请号：US18590141

申请日：2024-02-28

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/14 ,  C23C16/455 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US20220301887A1

公开(公告)日：2022-09-22

申请号：US17202675

申请日：2021-03-16

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis

IPC: H01L21/3213 ,  H01L21/285

Abstract: Embodiments of this disclosure provide methods for etching ruthenium. A halide-containing-gas is flowed into a substrate processing chamber, and then an oxygen-containing gas is flowed into the substrate processing chamber. The methods may include atomic layer etching (ALE). The methods may be conducted at higher processing chambers, permitting deposition and etching of ruthenium to be conducted in the same processing chamber.

公开(公告)号：US20200377538A1

公开(公告)日：2020-12-03

申请号：US16996459

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10738008B2

公开(公告)日：2020-08-11

申请号：US16400269

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07F1/08 ,  C07D213/38 ,  C07F7/00 ,  C07D207/335 ,  C07D213/36 ,  C23C16/455 ,  C23C16/18 ,  C07F1/00 ,  C07F5/02 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  C07F15/00 ,  C07C211/13 ,  C07C211/54 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US20200148712A1

公开(公告)日：2020-05-14

申请号：US16747220

申请日：2020-01-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/34

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10364492B2

公开(公告)日：2019-07-30

申请号：US14515958

申请日：2014-10-16

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Ravi Kanjolia ,  Shaun Garrett

IPC: C23C16/18 ,  C23C16/455 ,  C22C22/00 ,  C23C16/34

Abstract: Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

公开(公告)号：US10323054B2

公开(公告)日：2019-06-18

申请号：US15823755

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/06 ,  C07F5/00 ,  C07F15/04 ,  C07F15/02

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by: where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described.

公开(公告)号：US10297462B2

公开(公告)日：2019-05-21

申请号：US15789282

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US20190013202A1

公开(公告)日：2019-01-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials,Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  H01L21/3213 ,  C23F1/00

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.