发明申请
- 专利标题: SEMICONDUCTOR PHOTOCATALYST AND ARTIFICIAL PHOTONIC SYNTHESIS DEVICE HAVING THE SAME
- 专利标题(中): 半导体光子学和人造光子合成装置
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申请号: US14748399申请日: 2015-06-24
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公开(公告)号: US20160032462A1公开(公告)日: 2016-02-04
- 发明人: Hitoshi YAMAGUCHI
- 申请人: DENSO CORPORATION
- 优先权: JP2014-157892 20140801
- 主分类号: C25B1/00
- IPC分类号: C25B1/00 ; C25B11/04 ; C25B13/04 ; C25B9/08 ; H01G9/20 ; C25B1/04
摘要:
A semiconductor photocatalyst includes first and second layers made of first and second materials, respectively. Band gaps of the first and second materials are equal to or smaller than 1.5 eV and 2.5 eV, respectively. A lower electric potential of a conduction band of the second material is disposed on a positive side from the first material. An upper electric potential of a valence band of the second material is disposed on a positive side from the first material and from an oxidation electric potential of water when the first and second layers are bonded to each other in the hetero junction manner. The lower electric potential of the conduction band of the first layer is disposed on a negative side from a reduction electric potential of hydrogen when the first and second layers are bonded to each other in the hetero junction manner.