发明申请
- 专利标题: NONVOLATILE MEMORY DEVICE AND WORLDLINE DRIVING METHOD THEREOF
- 专利标题(中): 非易失性存储器件及其驱动方法
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申请号: US14741224申请日: 2015-06-16
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公开(公告)号: US20160035423A1公开(公告)日: 2016-02-04
- 发明人: Sang-Wan NAM , Sun-Min YUN , Bongsoon LIM , Yoon-Hee CHOI
- 申请人: Sang-Wan NAM , Sun-Min YUN , Bongsoon LIM , Yoon-Hee CHOI
- 优先权: KR10-2014-0097534 20140730
- 主分类号: G11C16/08
- IPC分类号: G11C16/08 ; G11C16/10 ; G11C16/28 ; G11C16/04
摘要:
According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array, an address decoder, an input/output circuit, a voltage generation circuit, and control logic. The memory cell array includes a plurality of memory blocks on a substrate. Each of the memory blocks includes a plurality of strings connected between bit lines and a common source line. The address decoder is configured to measure impedance information of word lines of a selected memory block. The voltage generation circuit is configured to generate word line voltages to be applied to word lines, and at least one of the word line voltages includes an offset voltage and a target voltage. The control logic is configured to adjust a level of the offset voltage and the offset time depending on the measured impedance information of the word lines.
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