Invention Application
US20160035765A1 METHOD OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE 审中-公开
制造金属接线和薄膜晶体管基板的方法

  • Patent Title: METHOD OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE
  • Patent Title (中): 制造金属接线和薄膜晶体管基板的方法
  • Application No.: US14706858
    Application Date: 2015-05-07
  • Publication No.: US20160035765A1
    Publication Date: 2016-02-04
  • Inventor: Seung-Ho YOONSu-Bin BAEYu-Gwang JEONG
  • Applicant: Samsung Display Co., Ltd.
  • Priority: KR10-2014-0096523 20140729
  • Main IPC: H01L27/12
  • IPC: H01L27/12
METHOD OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE
Abstract:
A method of fabricating metal wiring, including: sequentially forming first and second conductive layers on a substrate; forming a first photosensitive film pattern on the first and second conductive layers; forming first and second conductive patterns by etching parts of the first and second conductive layers by using the first photosensitive film pattern as a mask; forming a second photosensitive film pattern positioned inside the first photosensitive film pattern by a predetermined interval by ashing the first photosensitive film pattern; etching an exposed first conductive pattern by using the second photosensitive film pattern as a mask; and removing the second photosensitive film pattern.
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