METHOD OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE
    1.
    发明申请
    METHOD OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE 审中-公开
    制造金属接线和薄膜晶体管基板的方法

    公开(公告)号:US20160035765A1

    公开(公告)日:2016-02-04

    申请号:US14706858

    申请日:2015-05-07

    CPC classification number: H01L27/1288 H01L27/124 H01L29/4908

    Abstract: A method of fabricating metal wiring, including: sequentially forming first and second conductive layers on a substrate; forming a first photosensitive film pattern on the first and second conductive layers; forming first and second conductive patterns by etching parts of the first and second conductive layers by using the first photosensitive film pattern as a mask; forming a second photosensitive film pattern positioned inside the first photosensitive film pattern by a predetermined interval by ashing the first photosensitive film pattern; etching an exposed first conductive pattern by using the second photosensitive film pattern as a mask; and removing the second photosensitive film pattern.

    Abstract translation: 一种制造金属布线的方法,包括:在基板上依次形成第一和第二导电层; 在所述第一和第二导电层上形成第一感光膜图案; 通过使用第一感光膜图案作为掩模来蚀刻第一和第二导电层的部分来形成第一和第二导电图案; 通过灰化所述第一感光膜图案形成位于所述第一感光膜图案内的预定间隔的第二感光膜图案; 通过使用第二感光膜图案作为掩模蚀刻暴露的第一导电图案; 并去除第二感光膜图案。

Patent Agency Ranking