Invention Application
- Patent Title: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US14804932Application Date: 2015-07-21
-
Publication No.: US20160035865A1Publication Date: 2016-02-04
- Inventor: Sho NAGAMATSU , Tomoaki MORIWAKA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2014-156746 20140731
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/4763 ; H01L27/12 ; H01L29/786 ; H01L21/02
Abstract:
A first conductor is formed over a substrate. A first insulator is formed over the first conductor. A second insulator including aluminum oxide is formed over the first insulator. A third insulator is formed in contact with a top surface of the second insulator. A first opening portion reaching the first conductor is provided in the first to third insulators. A second conductor is formed over the third insulator and in the first opening portion. A third conductor is formed in the first opening portion by removing part of the second conductor over the third insulator so that a surface of the third conductor is parallel to a bottom surface of the substrate. A first transistor including an oxide semiconductor is formed over the third insulator.
Information query
IPC分类:
