发明申请
US20160035930A1 GRAIN GROWTH FOR SOLAR CELLS 有权
太阳能电池颗粒生长

  • 专利标题: GRAIN GROWTH FOR SOLAR CELLS
  • 专利标题(中): 太阳能电池颗粒生长
  • 申请号: US14447526
    申请日: 2014-07-30
  • 公开(公告)号: US20160035930A1
    公开(公告)日: 2016-02-04
  • 发明人: Taeseok Kim
  • 申请人: Taeseok Kim
  • 主分类号: H01L31/18
  • IPC分类号: H01L31/18 H01L31/0368 H01L31/028
GRAIN GROWTH FOR SOLAR CELLS
摘要:
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions of the silicon layer can have a grain size larger than other portions of the silicon layer. For example, larger grains of the silicon layer formed within a depletion region between P-type and N-type doped regions can minimize recombination loss at the P-type and N-type doped region boundaries and improve solar cell efficiency.
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