发明申请
- 专利标题: GRAIN GROWTH FOR SOLAR CELLS
- 专利标题(中): 太阳能电池颗粒生长
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申请号: US14447526申请日: 2014-07-30
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公开(公告)号: US20160035930A1公开(公告)日: 2016-02-04
- 发明人: Taeseok Kim
- 申请人: Taeseok Kim
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; H01L31/0368 ; H01L31/028
摘要:
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions of the silicon layer can have a grain size larger than other portions of the silicon layer. For example, larger grains of the silicon layer formed within a depletion region between P-type and N-type doped regions can minimize recombination loss at the P-type and N-type doped region boundaries and improve solar cell efficiency.
公开/授权文献
- US09466754B2 Grain growth for solar cells 公开/授权日:2016-10-11
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